Products
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Microwave ferrite with high dielectric constant
Specifications: HCBCV8/18E-(Φ1.5~10)mm×(0.4~3)mm;
Parameters: Ferrite saturation magnetization 1200~1800Gs, ferromagnetic resonance line width ≤100Oe, dielectric constant 18~30;
Features: Small loss of ferrite, high dielectric constant, contribute to the miniaturization and lightweight of microwave devices
Application: It can be widely used in coaxial, waveguide, microstrip devices, including circulators, isolators, etc
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Ferrite-dielectric Ceramic Nested composite substrate (FDA substrate)
Specifications: HCXYCV8/18X-ε20/50-(Φ1.5~3)mm×(5~30)mm;
Parameters: ferrite saturation magnetization 800~1800Gs, ferromagnetic resonance line width ≤30Oe, dielectric constant of dielectric ceramics 20~50;
Features: The ferrite loss is small, the composite substrate can effectively improve the overall dielectric constant, reduce the size of the device, and ultimately improve the stability, safety and reliability of the system
Application: It can be widely used in 5G communication circulators and isolators
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Spinel microwave ferrite array composite substrate
Specification: HCXNZ20/53D-Aε20/50-2in
Parameters: ferrite saturation magnetization 2000-5300gs, ferromagnetic resonance line width 100-250Oe, dielectric constant of dielectric ceramics 20-50;
Product characteristics: The composite substrate material temperature resistance of more than 500℃, meet the device thin film circuit magnetron sputtering high temperature process and reliability technical requirements, help to greatly reduce the size of the device, and significantly reduce the insertion loss of the device, improve the performance of the device
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Garnet microwave ferrite array composite substrate
Specification: HCXYGd8/18P-Aε20/50-2in
Parameters: ferrite saturation magnetization 800~1800Gs, ferromagnetic resonance linewidth ≤50Oe, dielectric constant of dielectric ceramics 20~50;
Product characteristics: The composite substrate material temperature resistance of more than 500℃, meet the device thin film circuit magnetron sputtering high temperature process and reliability technical requirements, help to greatly reduce the size of the device, and significantly reduce the insertion loss of the device, improve the performance of the device