Parameters: ferrite saturation magnetization 2000-5300gs, ferromagnetic resonance line width 100-250Oe, dielectric constant of dielectric ceramics 20-50;
Product characteristics: The composite substrate material temperature resistance of more than 500℃, meet the device thin film circuit magnetron sputtering high temperature process and reliability technical requirements, help to greatly reduce the size of the device, and significantly reduce the insertion loss of the device, improve the performance of the device
